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Feed quality of modern varieties of Festuca arundinacea and Phleum pratense as an alternative to Lolium perenne in intensively managed grassland with different defoliation schemes
- Talea Becker, Manfred Kayser, Johannes Isselstein
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- Journal:
- The Journal of Agricultural Science / Volume 161 / Issue 5 / October 2023
- Published online by Cambridge University Press:
- 29 November 2023, pp. 645-653
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Grassland production based on cutting-only and an increasing frequency of prolonged periods of drought due to climate change could lead to decreased productivity in Lolium perenne. In field experiments, we tested whether Festuca arundinacea and Phleum pratense could be suitable alternatives to L. perenne on intensively managed grassland on clay, peat and sandy soil. The three grasses were sown in mixture with Poa pratensis and Trifolium repens and subjected to different frequencies of defoliation representing a cutting-only system, simulated grazing system and a mixed system. We found that in systems with at least six defoliations, F. arundinacea represented an acceptable compromise between feed quality (6.4 MJ net energy/kg dry matter (DM), 19.3% crude protein, CP), persistence (mass proportion >90%), and DM yield (12.7 Mg/ha). However, for dairy production based on intensive cutting-only systems, the quality of F. arundinacea was insufficient (5.9 MJ net energy/kg DM, 15.6% CP). Mixtures with P. pratense as the main sown species did not differ significantly in production of net energy and CP from L. perenne in cutting-only systems on sandy soil. On peat land, all sown mixtures were invaded by Holcus lanatus. We found that under frequent defoliation conditions, H. lanatus-rich swards had comparatively good DM yields (9.2 Mg/ha) and a feed quality that would be sufficient for dairy cow nutrition (net energy, 6.2–6.4 MJ/kg DM; 18.8–20.4% CP). We conclude that there is potential to adapt the choice of grasses and mixtures in different production systems to meet the challenges of climate change.
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- By Mitchell Aboulafia, Frederick Adams, Marilyn McCord Adams, Robert M. Adams, Laird Addis, James W. Allard, David Allison, William P. Alston, Karl Ameriks, C. Anthony Anderson, David Leech Anderson, Lanier Anderson, Roger Ariew, David Armstrong, Denis G. Arnold, E. J. Ashworth, Margaret Atherton, Robin Attfield, Bruce Aune, Edward Wilson Averill, Jody Azzouni, Kent Bach, Andrew Bailey, Lynne Rudder Baker, Thomas R. Baldwin, Jon Barwise, George Bealer, William Bechtel, Lawrence C. Becker, Mark A. Bedau, Ernst Behler, José A. Benardete, Ermanno Bencivenga, Jan Berg, Michael Bergmann, Robert L. Bernasconi, Sven Bernecker, Bernard Berofsky, Rod Bertolet, Charles J. Beyer, Christian Beyer, Joseph Bien, Joseph Bien, Peg Birmingham, Ivan Boh, James Bohman, Daniel Bonevac, Laurence BonJour, William J. Bouwsma, Raymond D. Bradley, Myles Brand, Richard B. Brandt, Michael E. Bratman, Stephen E. Braude, Daniel Breazeale, Angela Breitenbach, Jason Bridges, David O. Brink, Gordon G. Brittan, Justin Broackes, Dan W. Brock, Aaron Bronfman, Jeffrey E. Brower, Bartosz Brozek, Anthony Brueckner, Jeffrey Bub, Lara Buchak, Otavio Bueno, Ann E. Bumpus, Robert W. Burch, John Burgess, Arthur W. Burks, Panayot Butchvarov, Robert E. Butts, Marina Bykova, Patrick Byrne, David Carr, Noël Carroll, Edward S. Casey, Victor Caston, Victor Caston, Albert Casullo, Robert L. Causey, Alan K. L. Chan, Ruth Chang, Deen K. Chatterjee, Andrew Chignell, Roderick M. Chisholm, Kelly J. Clark, E. J. Coffman, Robin Collins, Brian P. Copenhaver, John Corcoran, John Cottingham, Roger Crisp, Frederick J. Crosson, Antonio S. Cua, Phillip D. Cummins, Martin Curd, Adam Cureton, Andrew Cutrofello, Stephen Darwall, Paul Sheldon Davies, Wayne A. Davis, Timothy Joseph Day, Claudio de Almeida, Mario De Caro, Mario De Caro, John Deigh, C. F. Delaney, Daniel C. Dennett, Michael R. DePaul, Michael Detlefsen, Daniel Trent Devereux, Philip E. Devine, John M. Dillon, Martin C. Dillon, Robert DiSalle, Mary Domski, Alan Donagan, Paul Draper, Fred Dretske, Mircea Dumitru, Wilhelm Dupré, Gerald Dworkin, John Earman, Ellery Eells, Catherine Z. Elgin, Berent Enç, Ronald P. Endicott, Edward Erwin, John Etchemendy, C. Stephen Evans, Susan L. Feagin, Solomon Feferman, Richard Feldman, Arthur Fine, Maurice A. Finocchiaro, William FitzPatrick, Richard E. Flathman, Gvozden Flego, Richard Foley, Graeme Forbes, Rainer Forst, Malcolm R. Forster, Daniel Fouke, Patrick Francken, Samuel Freeman, Elizabeth Fricker, Miranda Fricker, Michael Friedman, Michael Fuerstein, Richard A. Fumerton, Alan Gabbey, Pieranna Garavaso, Daniel Garber, Jorge L. A. Garcia, Robert K. Garcia, Don Garrett, Philip Gasper, Gerald Gaus, Berys Gaut, Bernard Gert, Roger F. Gibson, Cody Gilmore, Carl Ginet, Alan H. Goldman, Alvin I. Goldman, Alfonso Gömez-Lobo, Lenn E. Goodman, Robert M. Gordon, Stefan Gosepath, Jorge J. E. Gracia, Daniel W. Graham, George A. Graham, Peter J. Graham, Richard E. Grandy, I. Grattan-Guinness, John Greco, Philip T. Grier, Nicholas Griffin, Nicholas Griffin, David A. Griffiths, Paul J. Griffiths, Stephen R. Grimm, Charles L. Griswold, Charles B. Guignon, Pete A. Y. Gunter, Dimitri Gutas, Gary Gutting, Paul Guyer, Kwame Gyekye, Oscar A. Haac, Raul Hakli, Raul Hakli, Michael Hallett, Edward C. Halper, Jean Hampton, R. James Hankinson, K. R. Hanley, Russell Hardin, Robert M. Harnish, William Harper, David Harrah, Kevin Hart, Ali Hasan, William Hasker, John Haugeland, Roger Hausheer, William Heald, Peter Heath, Richard Heck, John F. Heil, Vincent F. Hendricks, Stephen Hetherington, Francis Heylighen, Kathleen Marie Higgins, Risto Hilpinen, Harold T. Hodes, Joshua Hoffman, Alan Holland, Robert L. Holmes, Richard Holton, Brad W. Hooker, Terence E. Horgan, Tamara Horowitz, Paul Horwich, Vittorio Hösle, Paul Hoβfeld, Daniel Howard-Snyder, Frances Howard-Snyder, Anne Hudson, Deal W. Hudson, Carl A. Huffman, David L. Hull, Patricia Huntington, Thomas Hurka, Paul Hurley, Rosalind Hursthouse, Guillermo Hurtado, Ronald E. Hustwit, Sarah Hutton, Jonathan Jenkins Ichikawa, Harry A. Ide, David Ingram, Philip J. Ivanhoe, Alfred L. Ivry, Frank Jackson, Dale Jacquette, Joseph Jedwab, Richard Jeffrey, David Alan Johnson, Edward Johnson, Mark D. Jordan, Richard Joyce, Hwa Yol Jung, Robert Hillary Kane, Tomis Kapitan, Jacquelyn Ann K. Kegley, James A. Keller, Ralph Kennedy, Sergei Khoruzhii, Jaegwon Kim, Yersu Kim, Nathan L. King, Patricia Kitcher, Peter D. Klein, E. D. Klemke, Virginia Klenk, George L. Kline, Christian Klotz, Simo Knuuttila, Joseph J. Kockelmans, Konstantin Kolenda, Sebastian Tomasz Kołodziejczyk, Isaac Kramnick, Richard Kraut, Fred Kroon, Manfred Kuehn, Steven T. Kuhn, Henry E. Kyburg, John Lachs, Jennifer Lackey, Stephen E. Lahey, Andrea Lavazza, Thomas H. Leahey, Joo Heung Lee, Keith Lehrer, Dorothy Leland, Noah M. Lemos, Ernest LePore, Sarah-Jane Leslie, Isaac Levi, Andrew Levine, Alan E. Lewis, Daniel E. Little, Shu-hsien Liu, Shu-hsien Liu, Alan K. L. Chan, Brian Loar, Lawrence B. Lombard, John Longeway, Dominic McIver Lopes, Michael J. Loux, E. J. Lowe, Steven Luper, Eugene C. Luschei, William G. Lycan, David Lyons, David Macarthur, Danielle Macbeth, Scott MacDonald, Jacob L. Mackey, Louis H. Mackey, Penelope Mackie, Edward H. Madden, Penelope Maddy, G. B. Madison, Bernd Magnus, Pekka Mäkelä, Rudolf A. Makkreel, David Manley, William E. Mann (W.E.M.), Vladimir Marchenkov, Peter Markie, Jean-Pierre Marquis, Ausonio Marras, Mike W. Martin, A. P. Martinich, William L. McBride, David McCabe, Storrs McCall, Hugh J. McCann, Robert N. McCauley, John J. McDermott, Sarah McGrath, Ralph McInerny, Daniel J. McKaughan, Thomas McKay, Michael McKinsey, Brian P. McLaughlin, Ernan McMullin, Anthonie Meijers, Jack W. Meiland, William Jason Melanson, Alfred R. Mele, Joseph R. Mendola, Christopher Menzel, Michael J. Meyer, Christian B. Miller, David W. Miller, Peter Millican, Robert N. Minor, Phillip Mitsis, James A. Montmarquet, Michael S. Moore, Tim Moore, Benjamin Morison, Donald R. Morrison, Stephen J. Morse, Paul K. Moser, Alexander P. D. Mourelatos, Ian Mueller, James Bernard Murphy, Mark C. Murphy, Steven Nadler, Jan Narveson, Alan Nelson, Jerome Neu, Samuel Newlands, Kai Nielsen, Ilkka Niiniluoto, Carlos G. Noreña, Calvin G. Normore, David Fate Norton, Nikolaj Nottelmann, Donald Nute, David S. Oderberg, Steve Odin, Michael O’Rourke, Willard G. Oxtoby, Heinz Paetzold, George S. Pappas, Anthony J. Parel, Lydia Patton, R. P. Peerenboom, Francis Jeffry Pelletier, Adriaan T. Peperzak, Derk Pereboom, Jaroslav Peregrin, Glen Pettigrove, Philip Pettit, Edmund L. Pincoffs, Andrew Pinsent, Robert B. Pippin, Alvin Plantinga, Louis P. Pojman, Richard H. Popkin, John F. Post, Carl J. Posy, William J. Prior, Richard Purtill, Michael Quante, Philip L. Quinn, Philip L. Quinn, Elizabeth S. Radcliffe, Diana Raffman, Gerard Raulet, Stephen L. Read, Andrews Reath, Andrew Reisner, Nicholas Rescher, Henry S. Richardson, Robert C. Richardson, Thomas Ricketts, Wayne D. Riggs, Mark Roberts, Robert C. Roberts, Luke Robinson, Alexander Rosenberg, Gary Rosenkranz, Bernice Glatzer Rosenthal, Adina L. Roskies, William L. Rowe, T. M. Rudavsky, Michael Ruse, Bruce Russell, Lilly-Marlene Russow, Dan Ryder, R. M. Sainsbury, Joseph Salerno, Nathan Salmon, Wesley C. Salmon, Constantine Sandis, David H. Sanford, Marco Santambrogio, David Sapire, Ruth A. Saunders, Geoffrey Sayre-McCord, Charles Sayward, James P. Scanlan, Richard Schacht, Tamar Schapiro, Frederick F. Schmitt, Jerome B. Schneewind, Calvin O. Schrag, Alan D. Schrift, George F. Schumm, Jean-Loup Seban, David N. Sedley, Kenneth Seeskin, Krister Segerberg, Charlene Haddock Seigfried, Dennis M. Senchuk, James F. Sennett, William Lad Sessions, Stewart Shapiro, Tommie Shelby, Donald W. Sherburne, Christopher Shields, Roger A. Shiner, Sydney Shoemaker, Robert K. Shope, Kwong-loi Shun, Wilfried Sieg, A. John Simmons, Robert L. Simon, Marcus G. Singer, Georgette Sinkler, Walter Sinnott-Armstrong, Matti T. Sintonen, Lawrence Sklar, Brian Skyrms, Robert C. Sleigh, Michael Anthony Slote, Hans Sluga, Barry Smith, Michael Smith, Robin Smith, Robert Sokolowski, Robert C. Solomon, Marta Soniewicka, Philip Soper, Ernest Sosa, Nicholas Southwood, Paul Vincent Spade, T. L. S. Sprigge, Eric O. Springsted, George J. Stack, Rebecca Stangl, Jason Stanley, Florian Steinberger, Sören Stenlund, Christopher Stephens, James P. Sterba, Josef Stern, Matthias Steup, M. A. Stewart, Leopold Stubenberg, Edith Dudley Sulla, Frederick Suppe, Jere Paul Surber, David George Sussman, Sigrún Svavarsdóttir, Zeno G. Swijtink, Richard Swinburne, Charles C. Taliaferro, Robert B. Talisse, John Tasioulas, Paul Teller, Larry S. Temkin, Mark Textor, H. S. Thayer, Peter Thielke, Alan Thomas, Amie L. Thomasson, Katherine Thomson-Jones, Joshua C. Thurow, Vzalerie Tiberius, Terrence N. Tice, Paul Tidman, Mark C. Timmons, William Tolhurst, James E. Tomberlin, Rosemarie Tong, Lawrence Torcello, Kelly Trogdon, J. D. Trout, Robert E. Tully, Raimo Tuomela, John Turri, Martin M. Tweedale, Thomas Uebel, Jennifer Uleman, James Van Cleve, Harry van der Linden, Peter van Inwagen, Bryan W. Van Norden, René van Woudenberg, Donald Phillip Verene, Samantha Vice, Thomas Vinci, Donald Wayne Viney, Barbara Von Eckardt, Peter B. M. Vranas, Steven J. Wagner, William J. Wainwright, Paul E. Walker, Robert E. Wall, Craig Walton, Douglas Walton, Eric Watkins, Richard A. Watson, Michael V. Wedin, Rudolph H. Weingartner, Paul Weirich, Paul J. Weithman, Carl Wellman, Howard Wettstein, Samuel C. Wheeler, Stephen A. White, Jennifer Whiting, Edward R. Wierenga, Michael Williams, Fred Wilson, W. Kent Wilson, Kenneth P. Winkler, John F. Wippel, Jan Woleński, Allan B. Wolter, Nicholas P. Wolterstorff, Rega Wood, W. Jay Wood, Paul Woodruff, Alison Wylie, Gideon Yaffe, Takashi Yagisawa, Yutaka Yamamoto, Keith E. Yandell, Xiaomei Yang, Dean Zimmerman, Günter Zoller, Catherine Zuckert, Michael Zuckert, Jack A. Zupko (J.A.Z.)
- Edited by Robert Audi, University of Notre Dame, Indiana
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- Book:
- The Cambridge Dictionary of Philosophy
- Published online:
- 05 August 2015
- Print publication:
- 27 April 2015, pp ix-xxx
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Echogenic mass in the right atrium after surgical ventricular septal defect closure: thrombus or tumour?
- Nicole de Winkel, Karen Becker, Manfred Vogt
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- Cardiology in the Young / Volume 20 / Issue 1 / February 2010
- Published online by Cambridge University Press:
- 13 January 2010, pp. 86-88
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We describe a neonate who presented with an echogenic mass in the right atrium 8 weeks after closure of ventricular and atrial septal defects. On a routine post operative check up after discharge, a mass was detected in the right atrium on echocardiography. As a thrombotic formation was suggested, lysis was started, in combination with the administration of unfractioned heparin. As there was no change in echogenicity or size of the mass, it was surgically excised. Histopathological examination revealed a myofibroblastic inflammatory tumour.
The location and effects of Si in (Ti1–xSix)Ny thin films
- Axel Flink, Manfred Beckers, Jacob Sjölén, Tommy Larsson, Slawomir Braun, Lennart Karlsson, Lars Hultman
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- Journal:
- Journal of Materials Research / Volume 24 / Issue 8 / August 2009
- Published online by Cambridge University Press:
- 31 January 2011, pp. 2483-2498
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- August 2009
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(Ti1–xSix)Ny (0 ≤ x ≤ 0.20; 0.99 ≤ y(x) ≤ 1.13) thin films deposited by arc evaporation have been investigated by analytical transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and nanoindentation. Films with x ≤ 0.09 are single-phase cubic (Ti,Si)N solid solutions with a dense columnar microstructure. Films with x > 0.09 have a featherlike microstructure consisting of cubic TiN:Si nanocrystallite bundles separated by metastable SiNz with coherent-to-semicoherent interfaces and a dislocation density of as much as 1014 cm−2 is present. The films exhibit retained composition and hardness between 31 and 42 GPa in annealing experiments to 1000 °C due to segregation of SiNz to the grain boundaries. During annealing at 1100–1200 °C, this tissue phase thickens and transforms to amorphous SiNz. At the same time, Si and N diffuse out of the films via the grain boundaries and TiN recrystallize.
Effects of O and N impurities on the nanostructural evolution during growth of Cr/Sc multilayers
- Naureen Ghafoor, Fredrik Eriksson, Arkady S. Mikhaylushkin, Igor A. Abrikosov, Eric. M. Gullikson, Ulrich Kressig, Manfred Beckers, Lars Hultman, Jens Birch
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- Journal of Materials Research / Volume 24 / Issue 1 / January 2009
- Published online by Cambridge University Press:
- 31 January 2011, pp. 79-95
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- January 2009
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Transition metal multilayers are prime candidates for high reflectivity soft x-ray multilayer mirrors. In particular, Cr/Sc multilayers in the amorphous state have proven to give the highest reflectivity in the water window. We have investigated the influence of impurities N and O as residual gas elements on the growth, structure, and optical performance of Cr/Sc multilayers deposited in high vacuum conditions by a dual cathode direct current magnetron sputter deposition. Multilayer structures with the modulation periods in the range of 0.9–4.5 nm and Cr layer to bilayer thickness ratios in the range of 0.17–0.83 were deposited with an intentionally raised base pressure (pB), ranging from 2 × 10−7 to 2 × 10−5 Torr. Compositional depth profiles were obtained by elastic recoil detection analysis and Rutherford backscattering spectroscopy, while the structural investigations of the multilayers were carried out using hard x-ray reflectivity and transmission electron microscopy. By investigating stacked multilayers, i.e., several multilayers with different designs of the modulation periods, stacked on top of each other in the samples, we have been able to conclude that both N and O are incorporated preferentially in the interior of the Sc layers. At pB ≤ 2 × 10−6 Torr, typically <3 at.% of N and <1.5 at.% of O was found, which did not influence the amorphous nanostructure of the layers. Multilayers deposited with a high pB ∼2 × 10−5 Torr, a N content as high as ∼37 at.% was measured by elastic recoil detection analysis. These multilayers mainly consist of understoichiometric face-centered cubic CrNx/ScNy nanocrystalline layers, which could be grown as thin at 0.3 nm and is explained by a stabilizing effect on the ScNy layers during growth. It is also shown that by adding a background pressure of as little as 5 × 10−6 Torr of pure N2 the soft x-ray reflectivity (λ = 3.11 nm) can be enhanced by more than 100% by N incorporation into the multilayer structures, whereas pure O2 at the same background pressure had no effect.
Imaging of Hybrid-Multiferroic and Translation Domains in a Spin-Spiral Ferroelectric
- Dennis Meier, Naëmi Leo, Thomas Lottermoser, Petra Becker, Ladislav Bohatý, Manfred Fiebig
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1199 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1199-F02-07
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- 2009
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Two fundamentally different types of domains were resolved in multiferroic MnWO4 by optical second harmonic generation (SHG). Hybrid-multiferroic (absolute) domains reflect the magnetic chirality coupled 1:1 to the spontaneous polarization because of the magnetic origin of the ferroelectric order. Magnetic translation (relative) domains reflect discontinuities in the progression of the magnetic spin spiral. SHG topography is the only experimental method so far allowing one to image both types of domains. The imaging procedure and the SHG contributions involved are therefore discussed in detail.
Growth and characterization of TiN/SiN(001) superlattice films
- Hans Söderberg, Magnus Odén, Axel Flink, Jens Birch, Per O.Å. Persson, Manfred Beckers, Lars Hultman
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- Journal:
- Journal of Materials Research / Volume 22 / Issue 11 / November 2007
- Published online by Cambridge University Press:
- 31 January 2011, pp. 3255-3264
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- November 2007
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We report the layer structure and composition in recently discovered TiN/SiN(001) superlattices deposited by dual-reactive magnetron sputtering on MgO(001) substrates. High-resolution transmission electron microscopy combined with Z-contrast scanning transmission electron microscopy, x-ray reflection, diffraction, and reciprocal-space mapping shows the formation of high-quality superlattices with coherently strained cubic TiN and SiN layers for SiN thickness below 7–10 Å. For increasing SiN layer thicknesses, a transformation from epitaxial to amorphous SiNx (x ⩾ 1) occurs during growth. Elastic recoil detection analysis revealed an increase in nitrogen and argon content in SiNx layers during the phase transformation. The oxygen, carbon, and hydrogen contents in the multilayers were around the detection limit (∼0.1 at.%) with no indication of segregation to the layer interfaces. Nanoindentation experiments confirmed superlattice hardening in the films. The highest hardness of 40.4 ± 0.8 GPa was obtained for 20-Å TiN with 5-Å-thick SiN(001) interlayers, compared to monolithic TiN at 20.2 ± 0.9 GPa.
Characterization of Nickel Induced Crystallized Silicon by Spectroscopic Ellipsometry
- Luis Pereira, Hugo Aguas, Manfred Beckers, Rui M. S. Martins, Elvira Fortunato, Rodrigo Martins
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- Journal:
- MRS Online Proceedings Library Archive / Volume 910 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0910-A21-06
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- 2006
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In this work Spectroscopic Ellipsometry (SE) was used to study metal induced crystallization (MIC) on amorphous silicon films in order to analyze the influence of different annealing conditions on their structural properties. The variation of the metal thickness has shown to be determinant on the time needed to full crystallize silicon films. Films of 100 nm thickness crystallize after 2h at 500°C using 1 nm of Ni deposited on it. When reducing the average metal thickness down to 0.05 nm the same silicon film will need almost 10 hours to be totally crystallized. Using a new approach on the modelling procedure of the SE data we show to be possible to determine the Ni remaining inside the crystallized films. The method consists in using Ni as reference on the Bruggeman Effective Medium Approximation (BEMA) layer that will simulated the optical response of the crystallized silicon. Silicon samples and metal layers with different thicknesses were analyzed and this new method has shown to be sensible to changes on the initial metal/silicon ratio. The nickel distribution inside the silicon layers was independently measured by Rutherford Backscattering Spectroscopy (RBS) to check the data obtained from the proposed approach.